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Download Advances in Non-volatile Memory and Storage Technology by Yoshio Nishi PDF

By Yoshio Nishi

New recommendations are wanted for destiny thinning out of nonvolatile reminiscence. Advances in Non-volatile reminiscence and garage Technology presents an summary of constructing applied sciences and explores their strengths and weaknesses.

After an outline of the present marketplace, half one introduces advancements in flash applied sciences, together with advancements in 3D NAND flash applied sciences and flash reminiscence for ultra-high density garage units. half seems on the merits of designing section swap reminiscence and resistive random entry reminiscence applied sciences. It appears particularly on the fabrication, homes, and function of nanowire section swap reminiscence applied sciences. Later chapters additionally give some thought to modeling of either steel oxide and resistive random entry reminiscence switching mechanisms, in addition to conductive bridge random entry reminiscence applied sciences. eventually, half 3 seems to be to the way forward for replacement applied sciences. The components lined contain molecular, polymer, and hybrid natural reminiscence units, and a number of random entry reminiscence units akin to nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive units.

Advances in Non-volatile reminiscence and garage Technology is a key source for postgraduate scholars and educational researchers in physics, fabrics technological know-how, and electric engineering. it's a necessary device for study and improvement managers concerned about electronics, semiconductors, nanotechnology, solid-state stories, magnetic fabrics, natural fabrics, and conveyable digital devices.

  • Provides an summary of constructing nonvolatile reminiscence and garage applied sciences and explores their strengths and weaknesses
  • Examines advancements to flash expertise, cost trapping, and resistive random entry memory
  • Discusses rising units reminiscent of these according to polymer and molecular electronics, and nanoelectromechanical random entry reminiscence (RAM)

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